c top b e c back e b wbfbp-03b plastic-encapsulate transistors transistor description npn epitaxial silicon transistor features epitaxial planar die construction complementary pnp type available (tk3906nnd03) ultra-small surface mount package also available in lead free version application general purpose amplifier, switching for portable equipment:(i.e. m obile phone,mp3, md,cd-rom, dvd-rom, note book pc, etc.) marking:1n c 1n b e maximum ratings ( t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 40 v v ebo emitter-base voltage 6 v i c collector current -continuous 0.2 a p c collector dissipation 0.15 w t j junction temperature 150 t stg storage temperature -55 ~ 150 electrical characteristics (t a=25 unless otherwise specified) parameter symbol test conditions min t yp max unit collector-base breakdown voltage v (br)cbo i c =10 a,i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 40 v emitter-base breakdown voltage v (br)ebo i e =10 a,i c =0 6 v collector cut-off current i cex v ce =30v,v eb(off) =3v 0.05 a emitter cut-off current i ebo v eb =5v,i c =0 0.1 a h fe(1) v ce =1v,i c =0.1ma 40 h fe(2) v ce =1v,i c =1ma 70 h fe(3) v ce =1v,i c =10ma 100 300 h fe(4) v ce =1v,i c =50ma 60 dc current gain h fe(5) v ce =1v,i c =100ma 30 v ce(sat)1 i c =10ma,i b =1ma 0.2 v collector-emitter saturation voltage v ce(sat)2 i c =50ma,i b =5ma 0.3 v v be(sat)1 i c =10ma,i b =1ma 0.65 0.85 v base-emitter saturation voltage v be(sat)2 i c =50ma,i b =5ma 0.95 v transition frequency f t v ce =20v,i c =10ma,f=100mhz 300 mhz wbfbp-03b (1.21.20.5) unit: mm 1. base 2. emitter 3. collector 2012- 0 willas electronic corp. TK3904NND03 preliminary
electrical characteristics (t a=25 unless otherwise specified) parameter symbol test conditions min typ m ax unit collector output capacitance c ob v cb =5v,i e =0,f=1mhz 4 pf noise figure nf v ce =5v,i c =0.1ma, 5 db delay time t d 35 ns rise time t r v cc =3v, v be(off) =-0.5v, i c =10ma , i b1 =1ma 35 n s storage time t s 200 ns fall time t f v cc =3v, i c =10ma i b1 = i b2 = 1ma 50 n s 2012- 0 willas electronic corp. wbfbp-03b plastic-encapsulate transistors TK3904NND03 preliminary
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